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半導體 UBM 製程介紹

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  • 半導體 UBM 製程介紹

2023年04月14日

UBM (under-bump metallization)是一種先進的封裝製程,主要是在晶片封裝中的集成電路 (IC) 與銅柱或焊點之間,製造薄膜金屬層。其功能是:

  1. 從矽晶片到焊料點的訊號連接。
  2. 阻擋焊錫汙染物擴散到矽晶片而造成污染。
  3. 通過粘附到晶片鈍化層和附著到焊料點焊盤,實現焊料點與晶片的機械互連。

UBM製程流程:

  1. 通過絕緣層定義焊點,通過PVD沉積 UBM 層,然後通過黃光製程在焊點上方製造通孔圖形,利用電鍍製程使通孔開放區域中產生焊點。
  2. 使用共晶焊料 (63% Sn-Pb) ,並在焊料之前鍍上一個銅或鎳柱。通常焊料會鍍出光阻頂部,產生 80-120 μm高的蘑菇形,足夠的焊料會在最終回流時達到所需的高度。當光阻被剝離時,焊料凸點會聳立在UBM 上方。
  3. UBM 蝕刻去除焊料凸塊之間所有金屬。當焊料回流時,它不會汙染介電層,僅限於鍍層凸點下方的 UBM上。在這種狀態下,熔融焊料的表面張力將其拉成所需的球體形狀。
  4. 助焊劑製程:主要作用是清除焊料和UBM表面的氧化物,提高金屬表面的清潔度,防止焊接時表面再次氧化,降低焊料表面張力,使焊料聚結成圓珠狀的水滴。

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