繁體中文
EnglishHPSP
HPSP (High Pressure Solution Provider) is a leading Korean equipment provider. Its main product is a vertical furnace, and it is a high pressure furnace specializing in high-pressure anneal technology for the global semiconductor industry. The company is best known for its world-first and exclusive H2/D2 high-pressure anneal technology, which is currently addressing the challenges in advanced node manufacturing include Logic and memory application.
In addition to its cutting-edge annealing technology. The company has a global sales and service organization with a strong presence in the US, Europe, and Asia regions, providing comprehensive support to customers across the semiconductor manufacturing value chain.
HPSP is committed to delivering innovative solutions that help customers achieve their goals of increased performance, efficiency, and cost-effectiveness. With its advanced technology and extensive experience in the semiconductor industry, HPSP is well-positioned to help customers stay ahead of the curve in this rapidly evolving market.
GINI-SYS
GENI-Sys System :The GENI-Sys System is a vertical high pressure fully automated thermal processing furnace, capable of processing 200mm to 300mm wafers. The system complies with today’s semiconductor industry standards for process equipment design, manufacturing, controls, and cleanliness.
The GENI-Sys system is a powerful 25 ATM pressurized processing system that provides superb annealing effect at temperature well below 450°C to address thermal budget limitation.
Main Features
Hardware and Software Options
There are several hardware and software options available for the GENI-Sys System, including the following:
- Dry gas standard, steam environment as option
- 200 mm or 300 mm wafer cassette loading instead of a FOUP
- Wafer handling (front side, back side)
- External Boiler (wet processing)
Standard Certification
SEMI-S2
ANSI Z535.4 and/or ISO 3864.2.
Application
- Provides a solution for CMOS device improvement including high-k, metal gate, and various metal silicides.
- It also offers high temperature (500-1100°C) highest growth rate for thick oxides application for various devices, such as, MEMS, Solar Cell, Optoelectronics, FPD, etc..
- The GENI-Sys is designed for advanced thermal processing, such as various oxide layers, using a variety of gases and/or steam.
- Temperatures are programmable and controllable from 150 to 1100 °C for both low and high temperature processes.
- Process pressures range from 1 to 25 atmospheres. Wafers can be processed in either a dry gas or steam environment.
Specification