 |
| Main Features: |
 |
Damage free and good uniformity with balanced ICP source & ESC
- Uniform temperature control by using specially designed cathode
- Low pressure & low temperature process
- RF Power : ICP (2KW/13.56Mhz), Bias(1KW/2Mhz)
|
| Standard Certification: |
|
1. Uniformity
Within wafer : ≤ +/- 5.0 %
Wafer to Wafer : ≤ +/- 3.0 %
2. Etch rate (oxide) : ≥ 3000Å/min
3. Oxide etch selectivity to PR : ≥ 10:1
4. Particle spec : ≤ 20ea @ 0.16μm
5. Footprint ≒7.6 [m2]
|
| Application: |
|
1. Etch-back , Light oxide etch, Descum
2. Optional : Nitride etch & Poly etch
|
| Specification: |
|
Semiconductor III-V Group - KOSTEK Systems, Inc. - KOSTEK R-10000 Light Etching System
Company Profile