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| Main Features: |
Plasma deposition is typically used in circumstances that require the deposition of a film where temperature sensitivity is an issue. In semiconductor processing this issue often arises due to material properties in the complex devices being fabricated.
The two most common films deposited are silicon oxide and silicon nitride, however other films such as silicon carbide and amorphous silicon are also possible. The choice of reactive gases determines the film. For silicon oxide, dichlorosilane or silane, combined with an appropriate oxidizer such as nitrous oxide, can be used. Silicon nitride is widely deposited with silane and ammonia or nitrogen. The choice of gases, pressures, and plasma power determine the films properties.
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| Types of Etcher |
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Versaline Series:
Semi-auto / Automatic PECVD and HDPCVD:
━PECVD (Plasma Enhanced CVD) with Load Lock or Cassette.
━HDPCVD (High Density Plasma CVD) with Load Lock or Cassette.
Vision Series:
━Manual PECVD
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| Standard Certification: |
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ISO 9001 |
| Application: |
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Plasma-Therm products and technologies serve a broad range of markets, including:
━MEMS/NEMS
━Solid-state lighting
━Wireless
━Photomask
━Nanotechnology
━Renewable energy
━Data storage
━Photonics
━R&D
━Mid-End-of-Line packaging
━Main Depositing materials are SiO2 and SiNx
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| Specification: |
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Semiconductor III-V Group -
Plasma-Therm - PECVD (Manual Vision Series / PECVD / HDPCVD)
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