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  Semiconductor III-V Group - KOSTEK Systems, Inc. - KOSTEK R-10000 Light Etching System

KOSTEK R-10000 Light Etching System
Main Features:
icon Damage free and good uniformity with balanced ICP source & ESC
    - Uniform temperature control by using specially designed cathode
    - Low pressure & low temperature process
    - RF Power : ICP (2KW/13.56Mhz), Bias(1KW/2Mhz)
Standard Certification:
icon 1. Uniformity
    Within wafer : ≤ +/- 5.0 %
    Wafer to Wafer : ≤ +/- 3.0 %
2. Etch rate (oxide) : ≥ 3000Å/min
3. Oxide etch selectivity to PR : ≥ 10:1
4. Particle spec : ≤ 20ea @ 0.16μm
5. Footprint ≒7.6 [m2]
icon 1. Etch-back , Light oxide etch, Descum
2. Optional : Nitride etch & Poly etch
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