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 Semiconductor III-V Group - KLA-Tencor - Candela Optical Surface Analyzer



Candela Optical Surface Analyzer /CS10 (Manual Load System) / CS20 (Automated Load System)
Candela Optical Surface Analyzer
The Candela defect detection system simultaneously measures surface reflectivity and topography for automatic defect detection and classification. The defect detection system's inspection technology combines scatterometry, ellipsometry, reflectometry, and topographical analysis to non-destructively inspect wafer surfaces for defects, and film thickness uniformity, of opaque substrates, epi layers, and transparent film coatings (SiC, GaN, sapphire).
Main Features:
icon High Brightness Light Emitting Diodes (HBLEDs)
The defect detection system is designed for inspection of transparent materials such as sapphire and GaN and can detect a wide variety of yield impacting defects such as substrate scratches and stains, epi-layer pits, crosshatch, crystal cracking, topographic anomalies and epi-layer uniformity.
High-Power RF Devices
Detection and classification of critical GaAs defects - from epi defects such as pits, rings, and bullseyes to substrate level defects including crystal slip and polishing stains. Extremely sensitive to GaAs substrate stains, many of which can go undetected under microscope or bright light defect detection inspection. Various stains have been identified as killer defects resulting in poor epi adhesion and rough epi morphology.
Standard Certification:
icon 1. CS10 (Manual Load System)
2. CS20 (Automated Load System)
3. Auto Defect Classification
  (Particle, Scratch, Pit, Bump, and Stain Detection)
Application:
icon 1. Opaque substrates
2. EPI Layers
3. Transparent film coatings (SiC, GaN, Sapphire).
Specification:
icon
Candela Optical Surface Analyzer / 8720 (Automated Load System)
Candela Optical Surface Analyzer
The Candela defect detection system simultaneously measures surface reflectivity and topography for automatic defect detection and classification. The defect detection system's inspection technology combines scatterometry, ellipsometry, reflectometry, and topographical analysis to non-destructively inspect wafer surfaces for defects, and film thickness uniformity, of opaque substrates, epi layers, and transparent film coatings (SiC, GaN, sapphire).
Main Features:
icon High Brightness Light Emitting Diodes (HBLEDs)
The defect detection system is designed for inspection of transparent materials such as sapphire and GaN and can detect a wide variety of yield impacting defects such as substrate scratches and stains, epi-layer pits, crosshatch, crystal cracking, topographic anomalies and epi-layer uniformity.
High-Power RF Devices
Detection and classification of critical GaAs defects - from epi defects such as pits, rings, and bullseyes to substrate level defects including crystal slip and polishing stains. Extremely sensitive to GaAs substrate stains, many of which can go undetected under microscope or bright light defect detection inspection. Various stains have been identified as killer defects resulting in poor epi adhesion and rough epi morphology.
Standard Certification:
icon 1. 8720 (Automated Load System)
2. Auto Defect Classification
  (Particle, Scratch, Pit, Bump, and Stain Detection)
Application:
icon 1. Opaque substrates
2. EPI Layers
3. Transparent film coatings (SiC, GaN, Sapphire).
Specification:
icon
Candela Optical Surface Analyzer / CS900 (Manual Load System) / CS920 (Automated Load System)
Candela Optical Surface Analyzer
The Candela defect detection system simultaneously measures surface reflectivity and topography for automatic defect detection and classification. The defect detection system's inspection technology combines scatterometry, ellipsometry, reflectometry, and topographical analysis to non-destructively inspect wafer surfaces for defects, and film thickness uniformity, of opaque substrates, epi layers, and transparent film coatings (SiC, GaN, sapphire).
Main Features:
icon High Brightness Light Emitting Diodes (HBLEDs)
The defect detection system is designed for inspection of transparent materials such as sapphire and GaN and can detect a wide variety of yield impacting defects such as substrate scratches and stains, epi-layer pits, crosshatch, crystal cracking, topographic anomalies and epi-layer uniformity.
High-Power RF Devices
Detection and classification of critical GaAs defects - from epi defects such as pits, rings, and bullseyes to substrate level defects including crystal slip and polishing stains. Extremely sensitive to GaAs substrate stains, many of which can go undetected under microscope or bright light defect detection inspection. Various stains have been identified as killer defects resulting in poor epi adhesion and rough epi morphology.
Standard Certification:
icon 1. CS900 (Manual Load System)
2. CS920 (Automated Load System)
3. Auto Defect Classification
  (Particle, Scratch, Pit, Bump, and Stain Detection)
Application:
icon 1. Opaque substrates
2. SiC Substrate
3. SiC/SiC (Epi Layer)
Specification:
icon
 
 
 
 
 
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